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Fast Recovery Diodes (FRD)
MA3D691
Silicon planar type
Unit : mm
For high-frequency rectification
15.0 0.5
9.9 0.3
4.6 0.2
I Features
* Low forward rise voltage VF * Fast reverse recovery time trr * TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV * Easy-to-mount, caused by its V cut lead end
3.2 0.1
13.7 0.2 4.2 0.2
1.5 - 0.4
+0
3.0 0.5
2.9 0.2
2.6 0.1 1.4 0.2 0.8 0.1
0.55 0.15
I Absolute Maximum Ratings Ta = 25C
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 200 200 10 70 -40 to +150 -40 to +150 Unit V V A A C C
5.08 0.5 2.54 0.3 1 2
1 : Cathode 2 : Anode TO-220D Package (2-pin)
Note) * : Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25C
Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* Thermal resistance VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg x cm 3. * : trr measuring circuit
50 50
Conditions VRRM = 200 V, TC = 25C VRRM = 200 V, Tj = 150C IF = 10 A, TC = 25C IF = 1 A, IR = 1 A
Min
Typ
Max 100 10 1.00 100 3 63
Unit A mA V ns C/W C/W
trr IF
D.U.T
5.5
IR
0.1 x IR
1
MA3D691
IF V F
10
1.6 1.4
Fast Recovery Diodes (FRD)
VF Ta
500
Ct VR
Terminal capacitance Ct (pF)
1
Ta = 150C
-20C
400
Forward voltage VF (V)
Forward current IF (A)
1.2 1.0 0.8 0.6 0.4 0.2 IF = 10 A 5A 1A
10-1
100C 25C
300
10-2
200
10-3
10-4
100
10-5
0
0.2
0.4
0.6
0.8
1.0
1.2
0 -40
0
0 40 80 120 160 200
0
50
100
150
200
250
300
Forward voltage VF (V)
Ambient temperature Ta (C)
Reverse voltage VR (V)
2

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